Usikov, D. A. : rechercher sur Z-Library

A. G. Khachaturyan, M. P. Usikov

Année:

2003

Langue:

english

Fichier:

PDF, 229 KB

english, 2003

A New Type of X-Ray and Electron Diffuse Scattering and Corresponding Strain Contrast on Electron Microscopic Images

Journal:

Journal of Materials Science: Materials in Electronics

Année:

1967

Langue:

english

Fichier:

PDF, 620 KB

english, 1967

Deep UV light emitting diodes grown by gas source molecular beam epitaxy

Sergey Nikishin, Boris Borisov, Vladimir Kuryatkov, Mark Holtz, Gregory A. Garrett, Wendy L. Sarney, Anand V. Sampath, Hongen Shen, Michael Wraback, Alexander Usikov, Vladimir Dmitriev

Journal:

Année:

2008

Langue:

english

Fichier:

PDF, 604 KB

english, 2008

Change in dislocation of 1Kh18N9T steel during hardening and softening

M. P. Usikov, L. M. Utevskiy

Journal:

Metal Science and Heat Treatment

Année:

1962

Langue:

english

Fichier:

PDF, 981 KB

english, 1962

Comparison of image restoration methods for lunar epithermal neutron emission mapping

T.P. McClanahan, V. Ivatury, G. Milikh, G. Nandikotkur, R.C. Puetter, R.Z. Sagdeev, D. Usikov, I.G. Mitrofanov

Journal:

Computers & Geosciences

Année:

2010

Langue:

english

Fichier:

PDF, 685 KB

english, 2010

Information and Communication Technologies (ICT) as keys to the enhancement of public awareness about potential earth impacts

Usikov, Denis A.

Journal:

Acta Astronautica

Année:

2013

Langue:

english

Fichier:

PDF, 364 KB

english, 2013

Weak Chaos and Quasi-Regular Patterns

Zaslavski, G. M., Sagdeev, R. Z., Usikov, D. A., Chernikov, A. A., Fox, Ronald F.

Journal:

American Journal of Physics

Année:

1992

Langue:

english

Fichier:

PDF, 486 KB

english, 1992

Defect-Related Luminescence in Undoped GaN Grown by HVPE

Reshchikov, M.A., Usikov, A., Helava, H., Makarov, Yu.

Journal:

Journal of Electronic Materials

Année:

2015

Langue:

english

Fichier:

PDF, 628 KB

english, 2015

[IEEE International Electron Devices Meeting. Technical Digest. IEDM - San Francisco, CA, USA (10-13 Dec. 2000)] International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) - The construction and evaluation of behavioral models for microwave devices based on time-domain large-signal measurements

Schreurs, D., Wood, J., Tufillaro, N., Usikov, D., Barford, L., Root, D.E.

Année:

2000

Langue:

english

Fichier:

PDF, 778 KB

english, 2000

Ultraviolet InAlGaN Light Emitting Diodes Grown on Hydride Vapor Phase Epitaxy AlGaN/Sapphire Templates

Kneissl, Michael, Yang, Zhihong, Teepe, Mark, Knollenberg, Cliff, Johnson, Noble M., Usikov, Alexander, Dmitriev, Vladimir

Journal:

Japanese Journal of Applied Physics

Année:

2006

Langue:

english

Fichier:

PDF, 149 KB

english, 2006

Effect of Capping on Electrical and Optical Properties of GaN Layers Grown by HVPE

Reshchikov, M. A., Usikov, A., Helava, H., Makarov, Yu., Puzyk, M. V., Papchenko, B. P.

Journal:

Journal of Electronic Materials

Année:

2016

Langue:

english

Fichier:

PDF, 1.01 MB

english, 2016

Structural, electrical and luminescent characteristics of ultraviolet light emitting structures grown by hydride vapor phase epitaxy

Polyakov, A.Y., Yun, Jin-Hyeon, Usikov, A.S., Yakimov, E.B., Smirnov, N.B., Shcherbachev, K.D., Helava, H., Makarov, Y.N., Kurin, S.Y., Shmidt, N.M., Rabinovich, O.I., Didenko, S.I., Tarelkin, S.A., P

Journal:

Modern Electronic Materials

Année:

2017

Langue:

english

Fichier:

PDF, 2.62 MB

english, 2017

Definition of hydraulic stability of KVGM-100 hot-water boiler and minimum water flow rate

A. A. Belov,A. N. Ozerov,N. V. Usikov,I. A. Shkondin

Journal:

Thermal Engineering

Année:

2016

Langue:

english

Fichier:

PDF, 655 KB

english, 2016

Optical Properties of Structures with Single and Multiple InGaN Insertions in a GaN Matrix

A.V. Sakharov, W.V. Lundin, I.L. Krestnikov, V.A. Semenov, A.S. Usikov, A.F. Tsatsulnikov, Yu.G. Musikhin, M.V. Baidakova, Zh.I. Alferov, N.N. Ledentsov, J. Holst, A. Hoffmann, D. Bimberg, I.P. Soshni

Journal:

Année:

1999

Langue:

english

Fichier:

PDF, 182 KB

english, 1999

Effect of Annealing on Defects in As-Grown and γ-Ray Irradiated n-GaN Layers

N.M. Shmidt, D.V. Davydov, V.V. Emtsev, I.L. Krestnikov, A.A. Lebedev, W.V. Lundin, D.S. Poloskin, A.V. Sakharov, A.S. Usikov, A.V. Osinsky

Journal:

Année:

1999

Langue:

english

Fichier:

PDF, 123 KB

english, 1999

Photopumped InGaN/GaN/AlGaN Vertical Cavity Surface Emitting Laser Operating at Room Temperature

I.L. Krestnikov, W.V. Lundin, A.V. Sakharov, V.A. Semenov, A.S. Usikov, A.F. Tsatsulnikov, Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann, D. Bimberg

Journal:

Année:

1999

Langue:

english

Fichier:

PDF, 146 KB

english, 1999

Mosaic Structure and Si Doping Related Peculiarities of Charge Carrier Transport in III–V Nitrides

N.M. Shmidt, V.V. Emtsev, A.S. Kryzhanovsky, R.N. Kyutt, W.V. Lundin, D.S. Poloskin, V.V. Ratnikov, A.V. Sakharov, A.N. Titkov, A.S. Usikov, P. Girard

Journal:

Année:

1999

Langue:

english

Fichier:

PDF, 226 KB

english, 1999

Growth and Characterization of Thick Si-Doped AlGaN Epilayers on Sapphire Substrates

W. V. Lundin, A. S. Usikov, A. V. Sakharov, V. V. Tretyakov, D. V. Poloskin, N. N. Ledentsov, A. Hoffmann

Journal:

Année:

1999

Langue:

english

Fichier:

PDF, 181 KB

english, 1999

Comparative Study of InGaN/GaN Structures Grown by MOCVD Using Various Growth Sequences

A.V. Sakharov, A.S. Usikov, W.V. Lundin, A.F. Tsatsulnikov, Ru-Chin Tu, Sun Bin Yin, Jim Y. Chi

Journal:

Année:

2001

Langue:

english

Fichier:

PDF, 91 KB

english, 2001

Lasing in Vertical Direction in Structures with InGaN Quantum Dots

I.L. Krestnikov, A.V. Sakharov, W.V. Lundin, A.S. Usikov, A.F. Tsatsulnikov, N.N. Ledentsov, Zh.I. Alferov, I.P. Soshnikov, D. Gerthsen, A.C. Plaut, J. Holst, A. Hoffmann, D. Bimberg

Journal:

Année:

2000

Langue:

english

Fichier:

PDF, 113 KB

english, 2000

Laser-Like Emission in the Blue-Green Spectral Range from InGaN/GaN/AlGaN Structures under Optical Pumping

A.V. Sakharov, A.S. Usikov, W.V. Lundin, D.A. Bedarev, A.F. Tsatsulnikov, E.E. Zavarin, A.I. Besulkin, N.N. Ledentsov, D. Bimberg

Journal:

Année:

2001

Langue:

english

Fichier:

PDF, 90 KB

english, 2001

Growth, Optical and Structural Characterization of InGaN/GaN/AlGaN Optically Pumped Lasers

W.V. Lundin, A.V. Sakharov, A.S. Usikov, D.A. Bedarev, A.F. Tsatsulnikov, Ru Chin Tu, Sun Bin Yin, Jim Y. Chi

Journal:

Année:

2001

Langue:

english

Fichier:

PDF, 95 KB

english, 2001

Optic and Acoustic Phonons in Strained Hexagonal GaN/AlGaN Multilayer Structures

V.Yu. Davydov, A.A. Klochikhin, I.E. Kozin, V.V. Emtsev, I.N. Goncharuk, A.N. Smirnov, R.N. Kyutt, M.P. Scheglov, A.V. Sakharov, W.V. Lundin, E.E. Zavarin, A.S. Usikov

Journal:

Année:

2001

Langue:

english

Fichier:

PDF, 93 KB

english, 2001

Growth and Characterization of AlGaN/GaN Superlattices

W.V. Lundin, A.V. Sakharov, A.F. Tsatsulnikov, E.E. Zavarin, A.I. Besulkin, M.F. Kokorev, R.N. Kyutt, V.Yu. Davydov, V.V. Tretyakov, D.V. Pakhnin, A.S. Usikov

Journal:

Année:

2001

Langue:

english

Fichier:

PDF, 84 KB

english, 2001

Time-Resolved Studies of InGaN/GaN Quantum Dots

I.L. Krestnikov, A.V. Sakharov, W.V. Lundin, A.S. Usikov, A.F. Tsatsulnikov, Yu.G. Musikhin, D. Gerthsen, N.N. Ledentsov, A. Hoffmann, D. Bimberg

Journal:

Journal of Crystal Growth

Année:

2002

Langue:

english

Fichier:

PDF, 142 KB

english, 2002

Phase equilibria in the In-Ga-As-P system

A.T. Gorelenok, V.N. Mdivani, P.P. Moskvin, V.S. Sorokin, A.S. Usikov

Journal:

Année:

1982

Langue:

english

Fichier:

PDF, 659 KB

english, 1982

Method of determining optical atmospheric parameters based on space-imagery Earth-surface

A.V. Agapov, D.A. Usikov, M.N. Fomenkova

Journal:

Acta Astronautica

Année:

1986

Langue:

english

Fichier:

PDF, 234 KB

english, 1986

Estimated corrections for the atmosphere in remote sensing problems

D.A. Usikov, M.N. Fomenkova

Journal:

Acta Astronautica

Année:

1987

Langue:

english

Fichier:

PDF, 299 KB

english, 1987

Comet Halley: Nucleus and jets (results of the VEGA mission)

R.Z. Sagdeev, G.A. Avanesov, I.V. Barinov, A.I. Debabov, V.A. Kvasikov, V.I. Moroz, V.A. Shamis, V.I. Tarnapolski, D.A. Usikov, Ya.L. Ziman, B.S. Zhukov, B.A. Smith, S. Larson, F. Szabo, K. Szegö, A.

Journal:

Advances in Space Research

Année:

1985

Langue:

english

Fichier:

PDF, 933 KB

english, 1985

The Hamiltonian method for quasicrystal symmetry

A.A. Chernikov, R.Z. Sagdeev, D.A. Usikov, G.M. Zaslavsky

Journal:

Physics Letters A

Année:

1987

Langue:

english

Fichier:

PDF, 364 KB

english, 1987

Electron energy spectrum in 2D-quasicrystals

A.V. Kuzmenko, I.R. Sagdeev, D.A. Usikov, G.M. Zaslavsky

Journal:

Physics Letters A

Année:

1988

Langue:

english

Fichier:

PDF, 268 KB

english, 1988

Perturbation of a stochastic web

V.V. Afanas'ev, R.Z. Sagdeev, D.A. Usikov, G.M. Zaslavsky

Journal:

Physics Letters A

Année:

1990

Langue:

english

Fichier:

PDF, 369 KB

english, 1990

Photoluminescence in Er-implanted AlGaN/GaN superlattices and GaN epilayers

N.A. Sobolev, A.M. Emel’yanov, V.I. Sakharov, I.T. Serenkov, E.I. Shek, A.I. Besyul`kin, W.V. Lundin, N.M. Shmidt, A.S. Usikov, E.E. Zavarin

Journal:

Journal of Crystal Growth

Année:

2003

Langue:

english

Fichier:

PDF, 226 KB

english, 2003

Thick AlN layers grown by HVPE

O. Kovalenkov, V. Soukhoveev, V. Ivantsov, A. Usikov, V. Dmitriev

Journal:

Année:

2005

Langue:

english

Fichier:

PDF, 391 KB

english, 2005

Effects of proton implantation on electrical and recombination properties of n-GaN

A.Y Polyakov, A.S Usikov, B Theys, N.B Smirnov, A.V Govorkov, F Jomard, N.M Shmidt, W.V Lundin

Journal:

Année:

2000

Langue:

english

Fichier:

PDF, 644 KB

english, 2000

Deep centers spectra and scanning electron microscope studies of p-GaN films prepared by metallorganic chemical vapor deposition on sapphire

A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, A.S. Usikov, N.M. Shmidt, W.V. Lundin

Journal:

Année:

2001

Langue:

english

Fichier:

PDF, 187 KB

english, 2001

Hydride vapor phase epitaxy-grown AlGaN/GaN high electron mobility transistors

M.A. Mastro, D. Tsvetkov, V. Soukhoveev, A. Usikov, V. Dmitriev, B. Luo, F. Ren, K.H. Baik, S.J. Pearton

Journal:

Année:

2003

Langue:

english

Fichier:

PDF, 368 KB

english, 2003

RF performance of HVPE-grown AlGaN/GaN HEMTs

M.A. Mastro, D. Tsvetkov, V. Soukhoveev, A. Usikov, V. Dmitriev, B. Luo, F. Ren, K.H. Baik, S.J. Pearton

Journal:

Année:

2004

Langue:

english

Fichier:

PDF, 299 KB

english, 2004

Uniformity of dc and rf performance of MBE-grown AlGaN/GaN HEMTS on HVPE-grown buffers

J.K. Gillespie, R.C. Fitch, N. Moser, T. Jenkins, J. Sewell, D. Via, A. Crespo, A.M. Dabiran, P.P. Chow, A. Osinsky, M.A. Mastro, D. Tsvetkov, V. Soukhoveev, A. Usikov, V. Dmitriev, B. Luo, S.J. Peart

Journal:

Année:

2003

Langue:

english

Fichier:

PDF, 112 KB

english, 2003

GaN/AlGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates

J.R. LaRoche, B. Luo, F. Ren, K.H. Baik, D. Stodilka, B. Gila, C.R. Abernathy, S.J. Pearton, A. Usikov, D. Tsvetkov, V. Soukhoveev, G. Gainer, A. Rechnikov, V. Dimitriev, G.-T. Chen, C.-C. Pan, J.-I.

Journal:

Année:

2004

Langue:

english

Fichier:

PDF, 303 KB

english, 2004

Studies of the origin of the yellow luminescence band, the nature of nonradiative recombination and the origin of persistent photoconductivity in n-GaN films

A.Y Polyakov, N.B Smirnov, A.S Usikov, A.V Govorkov, B.V Pushniy

Journal:

Année:

1998

Langue:

english

Fichier:

PDF, 363 KB

english, 1998

Deep centers in AlGaN-based light emitting diode structures

A.Y Polyakov, N.B Smirnov, A.V Govorkov, M.G Mil'vidskii, A.S Usikov, B.V Pushnyi, W.V Lundin

Journal:

Année:

1999

Langue:

english

Fichier:

PDF, 161 KB

english, 1999

Quantum dots formed by ultrathin insertions in wide-gap matrices

N.N Ledentsov, I.L Krestnikov1, M Straßburg, R Engelhardt, S Rodt, R Heitz, U.W Pohl, A Hoffmann, D Bimberg, A.V Sakharov, W.V Lundin, A.S Usikov, Zh.I Alferov, D Litvinov, A Rosenauer, D Gerthsen

Journal:

Thin Solid Films

Année:

2000

Langue:

english

Fichier:

PDF, 421 KB

english, 2000

Radiation-induced defects in n-type GaN and InN

V.V. Emtsev, V.Yu. Davydov, E.E. Haller, A.A. Klochikhin, V.V. Kozlovskii, G.A. Oganesyan, D.S. Poloskin, N.M. Shmidt, V.A. Vekshin, A.S. Usikov

Journal:

Année:

2001

Langue:

english

Fichier:

PDF, 151 KB

english, 2001

A new approach to analysis of mosaic structure peculiarities of gallium nitride epilayers

A.G. Kolmakov, V.V. Emtsev, W.V. Lundin, V.V. Ratnikov, N.M. Shmidt, A.N. Titkov, A.S. Usikov

Journal:

Année:

2001

Langue:

english

Fichier:

PDF, 114 KB

english, 2001

Behavior of electrically active point defects in irradiated MOCVD n-GaN

V.V Emtsev, V.Yu Davydov, V.V Kozlovskii, D.S Poloskin, A.N Smirnov, N.M Shmidt, A.S Usikov

Journal: